“数理论坛”第110期：低维材料热导及界面热阻调控研究

报告人：徐象繁

时间：9月25日（周三）10：00--11:30

地点：东区教学科研综合楼A座1104

报告人简介：2003年毕业于浙江大学大学物理系，获理学学士学位；2008年毕业于浙江大学大学物理系，获博士学位，专业为凝聚态物理；攻读博士学位期间主要从事强关联体系热电及磁热实验研究工作。之后在新加坡国立大学物理系/石墨烯研究中心进行博士后研究，从事低维材料如石墨烯的反常热导率及其相关应用工作。2013年3月加入同济大学物理科学与工程学院/声子学与热能科学中心，从事低维材料热传输实验研究。当前主要研究方向包括：(a)低维材料中的反常热传导，以此来验证傅里叶定律的普适性;(b)有机物、有机纳米复合材料及二维材料热传导研究;(c)金属-半导体，半导体-半导体及有机物-半导体中的界面热导物理研究，包括电子-电子耦合、电子-声子耦合及声子-声子耦合等。到目前为止，在Nat. Commun., Phys. Rev. Lett., Nat. Sci. Rev., Adv. Mater., Appl. Phys. Lett.等发表40多篇论文，SCI总引用8300多次。

报告摘要：Interfacial thermal resistance (ITR) plays an important role in thermal dissipation across different materials and it has been widely investigated in recent years. An example is the integrated electronic circles in which heat dissipating issue has recently become the bottleneck. With further miniaturization of electronics, the accumulated waste heat has increased the operating temperature to a high value where thermal management and heat dissipation become crucial for the performance of devices^[1]. The severe thermal management problem has prevented the operating frequency from going beyond several GHz when the dissipated waste heat exceeds 100 Wcm^-2. This work is separated into two parts: (a) We introduced an additional electron-phonon coupling channel in the thermal transport across graphene-dielectric interfaces and the scanning thermal microscopy technique measurement of graphene electronic devices gave direct evidence of an enhanced heat dissipation by tuning the surface carries concentration^[2]. (b) Chemical vapor deposition (CVD) method was utilized to fabricate mono-layer transition metal dichalcogenides (TMDCs) depositing directly onto SiO₂/Si substrate; we demonstrated that the interfacial thermal conductance of TMDCs/oxide was significantly promoted by introducing a stronger combination at the interface of TMDCs/oxide^[3-5].

[1] X. Xu, J. Chen, J. Zhou and B. Li, Adv. Mat.30, 1705544 (2018)

[2] Y. Zhanget al. submitted to ES Energy & Environmental

[3] J. Guoet al. J. Phys. D: Appl. Phys.52, 385306 (2019).

[4] X. Liet al. J. Phys. D: Appl. Phys.50, 104002 (2017)

[5] D. Liuet al. Nat. Comm.10, 1188 (2019)

邀请人：王清波副教授

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